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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Identifieur interne : 00E181 ( Main/Repository ); précédent : 00E180; suivant : 00E182

Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Auteurs : RBID : Pascal:02-0255402

Descripteurs français

Pascal (Inist)
- 8570K, 8575S, 8535B, 8105E, 7575, 8107S, Etude expérimentale, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite étroite, Silicium, Puits quantique semiconducteur, Tête magnétique, Système mésoscopique, Magnétorésistance, Capteur magnétique.

English descriptors

KwdEn :
- Experimental study, III-V semiconductors, Indium compounds, Magnetic heads, Magnetic sensors, Magnetoresistance, Mesoscopic systems, Narrow band gap semiconductors, Semiconductor quantum wells, Silicon.

Abstract

A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 Ω/T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2. © 2002 American Institute of Physics.

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Pascal:02-0255402

Le document en format XML

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<author><name sortKey="Solin, S A" uniqKey="Solin S">S. A. Solin</name>
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<wicri:cityArea>NEC Research Institute, 4 Independence Way, Princeton</wicri:cityArea>
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<author><name sortKey="Hines, D R" uniqKey="Hines D">D. R. Hines</name>
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<author><name sortKey="Rowe, A C H" uniqKey="Rowe A">A. C. H. Rowe</name>
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<author><name sortKey="Tsai, J S" uniqKey="Tsai J">J. S. Tsai</name>
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<author><name sortKey="Pashkin, Yu A" uniqKey="Pashkin Y">Yu. A. Pashkin</name>
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<author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name>
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<author><name sortKey="Goel, N" uniqKey="Goel N">N. Goel</name>
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<author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name>
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<publicationStmt><idno type="inist">02-0255402</idno>
<date when="2002-05-27">2002-05-27</date>
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<term>Indium compounds</term>
<term>Magnetic heads</term>
<term>Magnetic sensors</term>
<term>Magnetoresistance</term>
<term>Mesoscopic systems</term>
<term>Narrow band gap semiconductors</term>
<term>Semiconductor quantum wells</term>
<term>Silicon</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>8570K</term>
<term>8575S</term>
<term>8535B</term>
<term>8105E</term>
<term>7575</term>
<term>8107S</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur bande interdite étroite</term>
<term>Silicium</term>
<term>Puits quantique semiconducteur</term>
<term>Tête magnétique</term>
<term>Système mésoscopique</term>
<term>Magnétorésistance</term>
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<front><div type="abstract" xml:lang="en">A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 Ω/T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2. © 2002 American Institute of Physics.</div>
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<fC01 i1="01" l="ENG"><s0>A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 Ω/T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2. © 2002 American Institute of Physics.</s0>
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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri